SiC MOSFET vs Si IGBT: Turn-Off Current Tail & Switching Loss

This simulator renders the turn-off switching transient of a power semiconductor as a 3D voltage–current–time trajectory, driven by a piecewise gate-charge model of the standard double-pulse test. Toggle between a wide-bandgap SiC MOSFET and a silicon IGBT to see the defining difference: the IGBT's bipolar drift region traps minority carriers that must recombine after the gate turns the channel off, producing an exponentially decaying "current tail" that keeps dissipating power at the full bus voltage long after the SiC device has fully commutated. Gate resistance, load current and bus voltage sliders let you explore how drive strength and operating point trade switching speed against dissipated energy, with the swept 3D curve, glowing instanced heat markers, and a live device package all reflecting the same underlying v(t)·i(t) waveform used to compute the numeric readouts.