GaN HEMT Channel: 2DEG Drift & Pinch-Off

This simulator renders the working channel of an AlGaN/GaN high-electron-mobility transistor: the two-dimensional electron gas (2DEG) that forms at the heterojunction interface from polarization charge alone, with no doping required. Thousands of electrons drift from source to drain along a real Caughey–Thomas velocity–field curve, bending into velocity saturation as the drain field rises and crowding toward the drain-side edge of the gate exactly as it does in a real short-gate, long-drain-access HEMT layout. A gate-voltage slider depletes the channel capacitively, showing pinch-off as a visible narrowing of the electron gas directly beneath the gate while the ungated access regions stay fully populated, and a temperature slider shows phonon scattering eating into the low-field mobility. Live readouts track μ₀(T), the average drift velocity and an estimated drain current density in mA/mm, the unit GaN HEMT datasheets actually use.