SiC MOSFET vs Si IGBT: Turn-Off Current Tail & Switching Loss

This 2D plotter draws the turn-off switching transient of a power semiconductor as live v(t) and i(t) waveforms, driven by a piecewise gate-charge model of the standard double-pulse test. A wide-bandgap SiC MOSFET and a silicon IGBT are simulated side by side on the same time axis so the defining difference is directly visible: the IGBT's bipolar drift region traps minority carriers that must recombine after the gate turns the channel off, producing an exponentially decaying "current tail" that keeps dissipating power at the full bus voltage long after the SiC device has fully commutated. Gate resistance, load current and bus voltage sliders let you explore how drive strength and operating point trade switching speed against dissipated energy, with a lower power-vs-time plot shading the instantaneous v·i product whose numerically integrated area is the live switching-energy readout for both devices.