Semiconductor Doping: Donor & Acceptor Carriers

Doping is the deliberate substitution of a tiny fraction of atoms in a silicon crystal with impurities that add or remove valence electrons, and it is the single mechanism that turns an inert crystal into every diode, transistor and solar cell in existence. This simulator renders a 3D silicon lattice as an instanced point cloud, lets you substitute phosphorus donors or boron acceptors at a chosen concentration, and animates the free electrons or holes those dopants release drifting through the crystal. Live readouts track electron density n, hole density p, their mass-action product n·p (which stays pinned near n_i(T)² regardless of doping), and how far the Fermi level shifts from mid-gap as doping and temperature change.