Czochralski Silicon Crystal Puller

Watch a silicon boule grow the way it does in every real semiconductor fab: a seed crystal dips into a molten crucible and is slowly withdrawn while rotating, freezing melt onto its tip layer by layer. This simulator ties the boule's neck, shoulder and body profile to the actual heat and mass balance of the process — pull rate sets the target diameter, the axial thermal gradient and pull rate together set the Voronkov ratio ξ = v/G, and that ratio decides whether the crystal freezes vacancy-rich (voids), interstitial-rich (dislocation loops), or lands in the narrow defect-lean band fabs aim for. Tune pull rate, thermal gradient, rotation speed and dopant type and read the diameter, grown length and defect regime live.