Semiconductor Doping (2D): Donor & Acceptor Carriers
Interactive 2D silicon-lattice simulator: place phosphorus donor or boron acceptor atoms, sweep temperature and watch per-dopant thermal ionization release mobile electrons and holes, with a live carrier-density-vs-temperature curve showing freeze-out, saturation and intrinsic regimes.
This is the 2D counterpart to the 3D silicon-lattice doping simulator, built around the same real solid-state physics: substitutional donors and acceptors, per-dopant thermal ionization probability, and the mass-action law n·p = ni(T)². Instead of an instanced point cloud you get a flat crystal cross-section you can click on directly to place phosphorus or boron atoms, a live carrier-concentration-vs-temperature curve computed by sweeping the same closed-form ionization formula the animation uses, and a numerically verified match between the theoretical ionization fraction and the fraction actually measured from the simulated dopant ensemble at every temperature.
Substitute phosphorus donor or boron acceptor atoms into a 3D silicon lattice and watch the free electrons and holes they release, with live carrier density, Fermi-level shift and mass-action-law readouts.
2D · HTML5 Canvas 2D · 60 FPS target · runs fully client-side, no install