Silicon lattice atom Donor (un-ionized) Donor (ionized) Free electron Free hole

Semiconductor Doping (2D): Donor & Acceptor Carriers

This is the 2D counterpart to the 3D silicon-lattice doping simulator, built around the same real solid-state physics: substitutional donors and acceptors, per-dopant thermal ionization probability, and the mass-action law n·p = ni(T)². Instead of an instanced point cloud you get a flat crystal cross-section you can click on directly to place phosphorus or boron atoms, a live carrier-concentration-vs-temperature curve computed by sweeping the same closed-form ionization formula the animation uses, and a numerically verified match between the theoretical ionization fraction and the fraction actually measured from the simulated dopant ensemble at every temperature.