Valley Splitting in a Silicon Quantum Dot Qubit: 2D Interference Map

Silicon spin qubits confine a single electron in a gate-defined quantum dot right at a Si/SiO₂ or Si/SiGe interface — and that interface does more than trap the charge: it lifts silicon's six-fold conduction-band valley degeneracy into a two-level "valley" system with its own splitting energy, ΔE_v. This 2D companion to the 3D valley-splitting simulator keeps the same real interference physics — the same Fang-Howard confinement width and the same monolayer-sensitive phase between the two valley Bloch states — but renders it independently: a pannable, zoomable atomic step cross-section with a directly sampled electron probability cloud on the left, and on the right a live curve plotting ΔE_v against interface step count so the near-vanishing crossings that make valley splitting so unpredictable device-to-device are visible as a graph, not just a single readout. An auto-sweep control continuously varies the confining field so the splitting, confinement width and cloud shape can be watched changing together, and a temperature slider turns the current splitting into a live thermal-leakage readout on the energy ladder below.