Carbon Nanotube Transistor: Ballistic Switching

This simulator models a carbon-nanotube field-effect transistor (CNTFET) with the same "top-of-the-barrier" ballistic transport model researchers use to design real devices: a gate voltage raises or lowers an electrostatic barrier at the middle of a semiconducting nanotube channel, and electrons injected from the source either cross it ballistically or reflect back, exactly as the Fermi-function transmission probability predicts. Sweep the gate and drain voltages, shrink or widen the tube diameter to change its bandgap, and adjust temperature to see the subthreshold swing move — while live readouts track drain current, barrier height, bandgap and switching slope.