AlGaN Nitride Epitaxial Growth & Bandgap Lab

III-nitride semiconductors — GaN, AlN, and their AlGaN alloys — are the materials behind every blue and white LED and most deep-UV disinfection lamps in use today. This simulator grows a wurtzite Al_xGa_1-xN nanocrystal atom by atom on a hexagonal substrate, the same layer-by-layer mechanism used inside a real MOCVD reactor, while three real controls — alloy composition, substrate temperature, and precursor V/III ratio — reshape the crystal and its physics live. Raising the Al fraction slides the bandgap from GaN's 3.42 eV up toward AlN's 6.20 eV via Vegard's law, shifting the simulated LED emission wavelength from blue-violet into the deep ultraviolet; temperature controls whether adatoms diffuse far enough for smooth step-flow growth or nucleate rough 3D islands; and the V/III ratio sets a precursor-limited growth rate that saturates just as it does on the factory floor.