Carbon Nanotube Transistor 2D: Barrier, Transfer & I-V Curves

This is the 2D counterpart to the 3D CNTFET scene, computing the identical top-of-the-barrier ballistic transport physics through three linked panels instead of a rendered nanotube: a device cross-section showing the gate-controlled barrier and ballistic/reflected electrons crossing or bouncing off it, a logarithmic transfer curve (I_DS vs V_G) whose subthreshold slope is the swing S, and an output I-V curve (I_DS vs V_DS) at the current gate bias. Sweep gate and drain voltage, tube diameter and temperature and watch drain current, barrier height, bandgap, subthreshold swing and the ON/OFF ratio update together across all three views.