Electromigration in Interconnects

Inside every current-carrying chip interconnect, electrons bombarding the lattice exert a tiny but relentless "electron wind" on the metal ions themselves. This simulator renders a 3D interconnect line as a lattice of instanced atoms and drives real electromigration transport across it: atoms drift in the direction of electron flow, thinning the line into a void at the cathode end while piling into a hillock at the anode end. Current density and temperature sliders and an aluminum/copper material choice all feed the same Black's-equation rate law that reliability engineers use to predict interconnect mean-time-to-failure, with a live MTTF readout, elapsed simulated time, and a rated-lifetime-used progress bar that turns from healthy green to failed red as the void grows.