Electromigration in Interconnects (2D)

Inside every current-carrying chip interconnect, electrons bombarding the lattice exert a tiny but relentless "electron wind" on the metal ions themselves. This top-down 2D companion renders that interconnect as a lattice of atoms drawn end-to-end and drives real electromigration transport across it: atoms drift in the direction of electron flow, thinning the line into a void at the cathode end while piling into a hillock at the anode end. Current density, temperature, an aluminum/copper material choice, and a line-length slider all feed the same Black's-equation rate law that reliability engineers use to predict interconnect mean-time-to-failure — plus the Blech short-length effect, which can make a short enough line immortal regardless of how long it is biased — with a live MTTF readout, elapsed simulated time, and a rated-lifetime-used progress bar that turns from healthy green to failed red as the void grows.