Strained-Layer Epitaxy & Misfit Dislocations

Grow a real 3D crystal lattice — a lattice-mismatched semiconductor film on a substrate, following the Matthews–Blakeslee critical-thickness model used across strained-Si CMOS, SiGe heterojunction bipolar transistors, and III-V lasers. Below the critical thickness the film is coherently strained, its atomic rows forced into exact registry with the substrate below. Push the thickness slider (or press Play growth) past the critical thickness and misfit dislocations nucleate at the interface, visibly relieving the strain as the film's atomic spacing drifts toward its own natural lattice constant. Switch between three real heteroepitaxial material systems, adjust the lattice mismatch, and read live critical-thickness, residual-strain and dislocation-count values computed directly from the governing equations.