Carbon Nanotube Interconnect: Ballistic vs Diffusive Resistance

This simulator models a bundle of metallic single-wall carbon nanotubes acting as an on-chip interconnect, using the real Landauer-Büttiker transport formula. Dial the interconnect length against the electron mean free path and watch resistance sit on a flat quantum-contact plateau while transport stays ballistic, then climb linearly once scattering dominates and the wire turns diffusive — with electrons rendered flowing through the tube bundle, flashing red at each scattering event so the ballistic-to-diffusive crossover is visible, not just numeric.