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⚡ MOSFET Cross-Section & I-V Curves (2D)

2D N-channel MOSFET lab: a live cross-section that grows and pinches off the inversion channel from the gradual-channel approximation, plus real square-law transfer and output I-V curves driven by the same Vgs, Vds, Vth, k and channel-length-modulation sliders.

Electronics & Circuits2DModerate60 FPS📱 Mobile-adapted⇄ 3D version

This 2D companion complements the 3D BJT/MOSFET load-line view by going one level deeper into the device physics of the N-channel MOSFET: a live cross-section renders the gradual-channel approximation directly — the inversion layer widens as V_GS rises above threshold and visibly pinches off before reaching the drain once V_DS exceeds the overdrive voltage — next to real square-law transfer and output I-V curves that update from the same five sliders (V_GS, V_DS, V_th, process gain k, channel-length modulation λ).

⚙ Under the hood

Level-1 (Shichman-Hodges) square-law NMOS model: cutoff when V_GS ≤ V_th; triode I_D = k·(V_ov·V_DS − V_DS²/2) while V_DS < V_ov; saturation I_D = ½·k·V_ov²·(1+λ·V_DS) once V_DS ≥ V_ov, where V_ov = V_GS − V_th. The cross-section's inversion-layer thickness follows the same gradual-channel approximation the equations derive from, and the drain-body depletion halo follows the step-junction law W ∝ √(V_bi+V_DS).

MOSFETTransistorI-V CharacteristicsChannel Pinch-offSquare-Law ModelSemiconductor Physics

2D · HTML5 Canvas 2D · 60 FPS target · runs fully client-side, no install