Single-Event Upset: Charge Diffusion Cross-Section (2D)

This 2D counterpart to the 3D memory-array simulator models the actual charge-collection mechanism behind a Single-Event Upset instead of just viewing the same grid from a different angle. Seen edge-on as a cross-section through the silicon, an ion's track deposits a fixed total charge, and that charge splits into two physically distinct pieces: a fast drift component the struck cell's electric field funnels in almost instantly, and a slower diffusion component that spreads outward as a genuine two-dimensional Gaussian charge cloud, computed from the actual diffusion Green's function and its closed-form inverse-square peak-charge law. A live chart plots that computed charge against distance right next to the critical-charge threshold, so the moment a strike's neighboring cells cross into upset territory is something you can read directly off the math, not just watch happen.