Nanoresistor Size-Effect Simulator

When a metal wire's cross-section shrinks toward the electron mean free path, its resistivity stops being a fixed material constant and starts depending on geometry. This simulator renders a 3D nanowire in which electrons drift under an applied field while scattering off the wire surface (specularly or diffusely) and off internal grain boundaries, alongside a live implementation of the real Fuchs–Sondheimer surface-scattering and Mayadas–Shatzkes grain-boundary-scattering formulas used in nanoelectronics to predict how copper interconnect resistance scales as chips shrink. Adjust wire diameter, grain size, surface specularity and grain-boundary reflection coefficient and watch the effective mean free path, resistivity and resistivity ratio respond exactly as the closed-form model predicts, with the particle field showing why: more collisions per unit length means more resistance.