Наноелектроніка за межами CMOS

Device Concepts

Tunnel FETs and steep-slope switches

2D material transistors and heterostructures

Spintronic and neuromorphic devices

Advanced Packaging

The key to realizing the full potential of nanoelectronics lies in advanced packaging techniques. These include silicon interposers, fan-out wafer level packaging (FOWLP), 2.5D and 3D integration architectures, as well as heterogeneous integration strategies.

These approaches address critical challenges related to interconnect density, thermal management, signal integrity, and ultimately, device performance and reliability.

Nanomaterial Characterization for Advanced Electronics

The primary objective of this project is to characterize the electrical properties of novel nanomaterials, specifically focusing on graphene and transition metal dichalcogenides (TMDs), using advanced characterization techniques.

We will perform Raman spectroscopy to assess the quality and structural order of these materials. This includes measuring peak shifts and intensities, which are sensitive indicators of defects and strain.

Furthermore, we will employ Hall effect measurements to determine the charge carrier mobility and conductivity of the nanomaterials. These parameters are crucial for understanding their potential in electronic devices.

Finally, we will conduct electrical resistance profiling to map the spatial variation of electrical properties within the samples, providing valuable insights into material homogeneity and performance.

Часті запитання

Спробуйте наживо

Усе, що вище, працює прямо у вашому браузері — відкрийте Brownian Motion — Nanoparticle Diffusion Simulator і змінюйте параметри під час роботи. Нічого не встановлюється, нічого не завантажується на сервер, уся модель живе в одній вкладці.