Ga⁺ ion beam Substrate (unmilled) Redeposited material
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Focused Ion Beam Milling 2D: Sputter-Yield Height Map

Focused ion beam (FIB) milling is a direct-write nanofabrication technique: a tightly focused beam of gallium ions is rastered across a substrate, physically sputtering material away atom by atom — no resist, no mask, no chemistry, just momentum transfer. This 2D sibling drives the same height-field grid and angle-dependent Yamamura sputter-yield law as the 3D version, rendered as a top-down shaded map with a live cross-section strip, so the trench, crater, via, or staircase pattern you mill develops its sidewall taper and redeposition ridges from the underlying physics rather than being pre-drawn. Adjust beam energy and dose to see how fast material is removed, switch scan patterns to see how geometry changes the local incidence angle feedback loop, and toggle redeposition to compare an idealised profile against the debris-forming reality of real FIB nanomachining.