This models a vertically integrated nanogenerator (VING): an array of upright, single-crystal ZnO nanowires (wurtzite structure — non-centrosymmetric, so it is intrinsically piezoelectric) sandwiched between a bottom electrode and a top electrode that presses down and releases. Each compression/release half-cycle strains every nanowire along its polar c-axis and generates a transient voltage.
Stress: σ = E · ε (E ≈ 140 GPa for ZnO along c-axis)
Piezoelectric: D = d33 · σ (d33 ≈ 12.4 pC/N for ZnO)
Voltage constant: g33 = d33 / ε33 (ε33 ≈ 8.5 · ε0)
Open-circuit V: Voc = g33 · σ · L (L = nanowire length)
Loaded output: VL = Voc · RL /(RL + Rs/N)
Power delivered: PL = VL² / RL
- Compressive strain amplitude — how far the top electrode compresses the array each cycle; sets the peak stress σ and hence Voc.
- Press frequency — how fast the compress/release cycle repeats (the mechanical input, e.g. finger tapping or footstep-driven harvesting).
- Load resistance RL — the external circuit the device drives. Power is only maximised when RL is matched to the array's internal source resistance Rs/N (impedance matching), exactly as for any real electrical source.
- Array density — more nanowires in parallel lower the combined internal resistance Rs/N, raising the deliverable current and power without changing the single-wire Voc.
Each nanowire is colour-coded by its instantaneous piezopotential: green for the compressed, positively-charged state and violet as it relaxes back through zero. In a real device a Schottky (rectifying) contact at the electrode interface keeps this alternating charge flow from short-circuiting internally, which is why the array can drive an external load instead of just cancelling itself out. Real devices output far less than this idealised d33-relation predicts, because mobile free carriers inside the semiconducting ZnO screen part of the piezopotential — a well-studied effect that gave rise to the field of "piezotronics".