The 3D scene animates a whole galvanostatic charge-discharge cycle at the circuit level (V = I·t/C, with an ESR IR-drop). This 2D companion zooms into the microscopic origin of that capacitance C: the Gouy-Chapman-Stern electric double layer that actually forms in the electrolyte within a few nanometres of one electrode surface, obtained by solving the nonlinear Poisson-Boltzmann equation.
Poisson-Boltzmann: d²φ/dx² = (2n₀ze/ε)·sinh(zeφ/kT)
Analytic solution (Gouy-Chapman, symmetric z:z electrolyte):
φ(x) = (4kT/ze)·atanh[ tanh(zeφ₀/4kT)·exp(−x/λ_D) ]
λ_D = √(εkT / (2n₀z²e²)) (Debye screening length)
Diffuse charge & differential capacitance (Gouy-Chapman):
σ = √(8εn₀kT)·sinh(zeφ₀/2kT)
C_d = dσ/dφ₀ = (ε/λ_D)·cosh(zeφ₀/2kT)
Stern (compact) layer in series: C_H = ε₀ε_H/d_H
Total: 1/C = 1/C_H + 1/C_d
Ion concentrations away from the surface follow the Boltzmann distribution n±(x) = n₀·exp(∓zeφ(x)/kT), which is what the animated cations and anions above the plot are sampled from — the same physics that determined how strongly they "hugged" the electrode in the 3D scene, but here computed as an explicit density profile rather than a lerp toward the surface.
- Bulk concentration n₀ — more ions screen the surface charge over a shorter distance (smaller λD), which raises the diffuse-layer capacitance Cd.
- Surface potential φ₀ — Cd grows like cosh(φ₀), unbounded in the idealized Gouy-Chapman model; the Stern layer caps this in series, so the total capacitance saturates near CH at high |φ₀| — the real, measured shape of a supercapacitor's C-V curve.
- Compact-layer thickness dH — a thinner Stern layer (closer ion approach) raises CH and pushes the saturation plateau higher, mirroring how real electrode surface area/porosity sets the usable capacitance in the 3D formula C = ε₀εrA/d.
This series combination of a fixed compact-layer capacitance and a voltage-dependent diffuse-layer capacitance is the textbook Gouy-Chapman-Stern model used to interpret real supercapacitor and electrochemical-interface measurements.